物理学报2012，Vol.61Issue(6)：446-452,7.
基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管潜在缺陷退化模型
A latent defect degradation model of metal-oxide-semiconductor field effect transistor based on pre-irradiation 1/f noise
摘要
Abstract
Based on metal-oxide-semiconductor field effect transistor（MOSFET） microscopic mechanism of radiation damage,a relation between radiation induced increase in number of oxide hole-traps and post-irradiation threshold voltage drift is proposed.Then,Based on MOSFET microscopic mechanism of 1/f noise generation,a quantitative relationship between pre-irradiation 1/f noise power spectral amplitude and post-irradiation threshold voltage drift is founded,which accords well with the experimental results.This relationship shows that pre-irradiation 1/f noise power spectral amplitude is proportional to post-irradiation threshold voltage drift, which can reflect the degradation of latent defect in MOSFET.So,this modal is helpful to characterize the quantity and severity of latent defect in MOSFET by using 1/f noise parameters.关键词
1/f噪声/潜在缺陷/界面陷阱/氧化层陷阱Key words
1/f noise/latent defect/interface trap/oxide trap分类
信息技术与安全科学引用本文复制引用
孙鹏,杜磊,陈文豪,何亮..基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管潜在缺陷退化模型[J].物理学报,2012,61(6):446-452,7.基金项目
国家自然科学基金（批准号：60276028）资助的课题 （）
