物理学报2012，Vol.61Issue(7)：427-433,7.
纳米金属Tm的电子浓度研究
Study of electron density of nanostructure metal Tm
摘要
Abstract
Electron density is an important parameter for the macroscopic properties of metal.The reflectance spectrum measurement and the Hall Effect measurement are basic experiments for obtaining electron density and carrier density.Two samples（sample 1：100 nm, sample 2：10 nm） of nanostructure block rare earth metal Tm are studied.Their reflectivity spectra show that the surface reflection of Tm metal possess metallic optical properties in a region of infrared-ultraviolet,the electronic densities n_p of 6s band are 2.434×l0~（28）/m~3 and 1.701×10~（28）/m~3 similar to that of alkali.The carriers measured by Hall Effect experiment are of cavity tipe in the two samples,and the carrier densities n_H are 8.032×10~（24）/m~3 and 7.679×10~（24）/m~3 respectively.They are only states near the Fermi surface.In addition, the conductance of Tm block is three orders of magnitude higher than one of semiconductor.The grain nanostructurization makes electronic density n_p,conductanceσ,and carrier density n_h decrease,but Hall coefficient R_H increase.关键词
纳米晶金属铥Tm/电子浓度/红外—紫外反射光谱/霍尔效应Key words
nanostructure metal Tm/electronic density/spectrum reflectance of infrared-ultraviolet/Hall effect分类
数理科学引用本文复制引用
侯碧辉,刘凤艳,焦彬,岳明..纳米金属Tm的电子浓度研究[J].物理学报,2012,61(7):427-433,7.基金项目
国家自然科学基金（批准号：50771002）资助的课题~~ （）
