物理学报2012，Vol.61Issue(10)：323-329,7.
部分耗尽绝缘层附着硅静态随机存储器总剂量辐射损伤效应的研究
Research on the total dose irradiation effect of partial-depletion-silicon-on insulator static random access memory
李明 1余学峰 2薛耀国 2卢健 1崔江维 1高博1
作者信息
- 1. 中国科学院新疆理化技术研究所,乌鲁木齐830011／新疆电子信息材料与器件重点实验室,乌鲁木齐830011／中国科学院研究生院,北京100049
- 2. 中国科学院新疆理化技术研究所,乌鲁木齐830011／新疆电子信息材料与器件重点实验室,乌鲁木齐830011
- 折叠
摘要
Abstract
In this paper, the changes of electrical parameters and their functional errors with the total radiation dose are studied, when the PDSOI static random access memory （SRAM） is irradiated under different total doses. After the SOI SRAM is irradiated by the 6^Co-γray, the total dose radiation damage mechanism and the correlation between the changes of device parameters and function errors are discussed. For the large-scale SOI integrated circuits, this provides a possible method to further study the total dose radiation hardening and the radiation damage assessment of the devices. It is indicated that the increase of current consumption is due mainly to the radiation-induced leakage current from both field oxygen and buried oxide. The drift of threshold voltage creates the decline in output high level, the slight increase in output low level, the significant reduction in peak-peak value, and the increase of transmission delay. When the total dose accumulates and reaches a certain amount of dose, the logic mutation error emerges, resulting in the failure of shutdown function. There is a certain correlation between the transmission delay, the output high and the logic error.关键词
部分耗尽绝缘层附着硅/静态随机存储器/总剂量效应/功耗电流Key words
partial-depletion-silicon-on insulator/static random access memory/total-dose effects/power supplycurrent分类
信息技术与安全科学引用本文复制引用
李明,余学峰,薛耀国,卢健,崔江维,高博..部分耗尽绝缘层附着硅静态随机存储器总剂量辐射损伤效应的研究[J].物理学报,2012,61(10):323-329,7.
