物理学报2012，Vol.61Issue(10)：423-428,6.
缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响
Influences of dislocation distribution on the resistive switching effect of Ag-SiO2 thin films
摘要
Abstract
Influences of dislocation distribution on the resistive switching effect of Ag doped SiO2 thin film are investigated under different sample preparation conditions. Stable resistance switching characteristics are observed for the samples annealed at 120℃ and prepared in Ar/O2 mixed atmosphere. It is shown that annealing process, electric field formation and atmosphere of preparation can change the intensity and the distribution of the dislocations （Ag interstitial atoms and oxygen vacancies） in the Ag-SiO2 structure, which leads to the resistive switching effect based on the formation and annihilation of the conducting filaments.关键词
电阻翻转效应/缺陷/热处理Key words
resistive switching/defects/thermal treatment分类
通用工业技术引用本文复制引用
张培健,孟洋,刘紫玉,潘新宇,梁学锦,陈东敏,赵宏武..缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响[J].物理学报,2012,61(10):423-428,6.基金项目
国家重点基础研究发展规划项目（批准号：2007CB925002和2009CB930803）和中国科学院知识创新工程项目（批准号：KJCX2-YW-W24）资助的课题. （）
