物理学报2012，Vol.61Issue(10)：442-446,5.
金属-氧化物-半导体场效应管辐射效应模型研究
A radiation degradation model of metal-oxide-semiconductor field effect transistor
孙鹏 1杜磊 1陈文豪 1何亮 1张晓芳1
作者信息
- 1. 西安电子科技大学技术物理学院,西安710071
- 折叠
摘要
Abstract
Based on the production kinetics of oxide-trapped charge and interface-trapped charge and the microscopic mechanism of radi- ation damage, a model of post-irradiation threshold voltage drift due to oxide trap and interface trap as a function of radiation dose is proposed. This model predicts that the post-irradiation threshold voltage drift due to oxide trap and interface trap would be linear in dose at low dose levels. At high dose levels, the post-irradiation threshold voltage drift due to oxide trap tend to be saturated, its peak value has no correlation with radiation dose, and the post-irradiation threshold voltage drift due to interface trap has an exponen- tial relationship with radiation dose. In addition, the model indicates that the oxide-trapped charge and the interface-trapped charge start a saturation phenomenon at different radiation doses, and the saturation phenomenon of oxide-trapped charge appears earlier than interface-trapped charge. Finally, the experimental results accord well with the model. This model provides a more accurate prediction for radiation damage in metal-oxide-semiconductor field effect transistor.关键词
界面陷阱/氧化层陷阱/金属-氧化物-半导体场效应管/辐射Key words
interface trap/oxide trap/metal-oxide-semiconductor field effect transistor/radiation分类
信息技术与安全科学引用本文复制引用
孙鹏,杜磊,陈文豪,何亮,张晓芳..金属-氧化物-半导体场效应管辐射效应模型研究[J].物理学报,2012,61(10):442-446,5.
