物理学报2012，Vol.61Issue(10)：485-491,7.
高功率微波作用下热载流子引起n型金属-氧化物-半导体场效应晶体管特性退化研究
Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave
摘要
Abstract
High power microwave （HPM） can disrupt the normal work of electronic systems through the effect of HPM on semiconductor devices. In this paper, the physical process and the physical model of the characteristic degradation of n-metal-oxide-semiconductor field-effect transistor （nMOSFET） induced by HPM are introduced. In device simulation results, the output characteristic curve of nMOSFET shows that HPM can induce the degradation of the characteristics of device, including the forward drift of threshold voltage, and the reduction of saturation current and transconductance. Based on the process and the model introduced in this paper, the voltage pulse generated by HPM makes nMOSFET be in depletion status and hot carrier increase; then the effect of hot carrier results in the characteristic degradation of device. The experimental result of MOS injected HPM shows the changes of output characteristics and model parameters are consistent with the device simulation results, proving that the physical process and the physical model introduced in the paper are correct.关键词
高功率微波/n型金属．氧化物-半导体场效应晶体管/热载流子/特性退化Key words
high power microwave/n-metal-oxide-semiconductor field-effect transistor/hot carrier/characteristics degradation分类
信息技术与安全科学引用本文复制引用
游海龙,蓝建春,范菊平,贾新章,查薇..高功率微波作用下热载流子引起n型金属-氧化物-半导体场效应晶体管特性退化研究[J].物理学报,2012,61(10):485-491,7.基金项目
国家自然科学基金（批准号：60906051）资助的课题. （）
