现代电子技术2012，Vol.35Issue(8)：175-178,4.
台槽刻蚀对埋栅型静电感应晶体管特性的影响
Influence of mesa and groove etching on characteristics of static induction transistor with buried gate structure
摘要
Abstract
For SIT with buried-gate structure in order to cut off connecting department between grating electrod and source cathode (or cathode) formed in the epilayer process, and open the grating electrode area, the mesa etching after the epitaxy is performed. The depth and shape of mesa etching are studied. To eliminate a variety of parasitic effect, a deep groove is etched outside active region to guarantee the grating source breakdown occurrenced in the internal and achieve the value closed to the theoretical value. In addition, "etching the gate and then etching the deep groove" can produce a good device easier than "etching the deep groove and then etching the gate".关键词
埋栅型SIT/台面刻蚀/深槽刻蚀/先台后槽Key words
SIT with buried-gate structure/ mesa etching/ deep groove etching/ mesa etching first then groove etching分类
信息技术与安全科学引用本文复制引用
朱筠..台槽刻蚀对埋栅型静电感应晶体管特性的影响[J].现代电子技术,2012,35(8):175-178,4.基金项目
甘肃省自然科学基金(3ZS051-A24-034) （3ZS051-A24-034）
