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MoO3作空穴注入层的绿光有机电致发光器件制备及其性能研究

史高飞 牛红林 鲁文武 胡俊涛

液晶与显示2012,Vol.27Issue(2):177-181,5.
液晶与显示2012,Vol.27Issue(2):177-181,5.DOI:10.3788/YJYXS20122702.0177

MoO3作空穴注入层的绿光有机电致发光器件制备及其性能研究

Fabrication and Performance Research of Green Organic Light Emitting Device with MoO3 Hole Injection Layer

史高飞 1牛红林 2鲁文武 3胡俊涛4

作者信息

  • 1. 特种显示技术教育部重点实验室
  • 2. 特种显示技术国家工程实验室
  • 3. 现代显示技术省部共建国家重点实验室培育基地
  • 4. 合肥工业大学光电技术研究院,安徽合肥230009
  • 折叠

摘要

Abstract

A green organic light emitting device(OLED) with the structure of ITO/MoO3 (x nm)/N,N'-diphenyl-N,N'-bis(l-naphthyl)-(l,18-biphenyl)-4,4-diamine(NPB)(40 nm)/tris (8-hydroxyquinoline)aluminum(Alq3 ) (60 nm)/LiF(l nm)/Al(150 nm) have been fabricated by vacuum deposition method,x = 0,5 nm. The detail process has been described. It was found that the treatment on the surface of ITC) substrates by oxygen plasma can effectively reduce the contact angle of the ITO surface in the experiments. By measuring and analyzing the performance of luminescence and electrical of device, the influences of the hole injection layer MoO3 on device performance was investigated. Experimental results show that HOMO level of MoO3 can reasonably match ITO work function, which reduces the hole-injecting barrierand improves the brightness and efficiency of device. When forward voltage is less than 10 V, the current density of device does not change significantly with the voltage increases; When the voltage is more than 10 V, the current density increases significantly. The chroma of device stabilizes in green light district of(0. 36, 0. 55) with the changes of the driving electric voltage.

关键词

有机电致发光器件/工艺流程/绿光/光电性能

Key words

organic light emitting devices) fabrication process/ green light/ electro-optical property

分类

信息技术与安全科学

引用本文复制引用

史高飞,牛红林,鲁文武,胡俊涛..MoO3作空穴注入层的绿光有机电致发光器件制备及其性能研究[J].液晶与显示,2012,27(2):177-181,5.

基金项目

国家973计划项目(No.2010CB334704 ()

No.2012CB723406) ()

国家自然科学基金(No.61040015 ()

No.61107014) ()

液晶与显示

OA北大核心CSCDCSTPCD

1007-2780

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