原子能科学技术2012，Vol.46Issue(4)：507-512,6.
静态随机存储器总剂量辐射及退火效应研究
Research on Total Dose Irradiation and Annealing Effect of Static Random Access Memory
李明 1余学峰 2许发月 3李茂顺 1高博 2崔江维 1周东 2席善斌 3王飞1
作者信息
- 1. 中国科学院新疆理化技术研究所,新疆乌鲁木齐830011
- 2. 新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011
- 3. 中国科学院研究生院,北京100049
- 折叠
摘要
Abstract
By comparing changes of device parameters (standby and operating power supply currents) and functional parameters (errors) with the total radiation dose and annealing time for 1 Mbit commercial static random access memory (SRAM) under the six biasesi impacts of the different working conditions on radiation damage and annealing at the different biases and temperatures (25 *C and 100 "C) were investigated. The different biases have great influence on the degradation and annealing recovery of functions and parameters of the device. Standby and operating power supply currents are sensitive parameters of the device. Radiation damage in device under the static biases is the most serious.关键词
静态随机存储器/总剂量效应/功耗电流/退火效应Key words
SRAM/ total dose effect/ power supply current/ annealing effect分类
信息技术与安全科学引用本文复制引用
李明,余学峰,许发月,李茂顺,高博,崔江维,周东,席善斌,王飞..静态随机存储器总剂量辐射及退火效应研究[J].原子能科学技术,2012,46(4):507-512,6.
