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多孔硅场发射阴极研究进展

罗文 胡文波

真空电子技术Issue(1):36-42,7.
真空电子技术Issue(1):36-42,7.

多孔硅场发射阴极研究进展

Developments of Porous Silicon Cold Cathode

罗文 1胡文波1

作者信息

  • 1. 西安交通大学电子物理与器件教育部重点实验室,陕西西安710049
  • 折叠

摘要

Abstract

Porous silicon (PS) cold cathode has several advantageous features, such as high energy e-lectrons emission, narrow emission angle, insensitivity to vacuum pressure, and quick dynamic response. This type of cathode is a good choice for field emission display. Moreover, it brings the hope for the fabrication of mercury-free, efficient, and stable flat panel light sources based on discharge-free light emission. This paper introduces the structure and developments of PS cathode and its potential applications in display devices, gas excitation without discharge, thin metal film deposition, electron beam lithography and so on.

关键词

多孔硅/冷阴极/表面电子发射/平板显示器件

Key words

Porous silicon, Cold cathode, Surface electron emitting, Flat panel display

分类

信息技术与安全科学

引用本文复制引用

罗文,胡文波..多孔硅场发射阴极研究进展[J].真空电子技术,2012,(1):36-42,7.

基金项目

中央高校基本科研业务费专项资金资助项目(No.2010-61) (No.2010-61)

真空电子技术

OACSTPCD

1002-8935

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