首页|期刊导航|半导体学报（英文版）|Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure
半导体学报（英文版）2012，Vol.33Issue(5)：6-12,7.DOI:10.1088/1674-4926/33/5/052002
Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure
Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure
摘要
Abstract
Within the effective-mass and finite-height potential barrier approximation,a theoretical study of the effects of strain and hydrostatic pressure on the exciton emission wavelength and electron-hole recombination rate in wurtzite cylindrical GaN/AlxGa1-xN quantum dots (QDs) is performed using a variational approach.Numerical results show that the emission wavelength with strain effect is higher than that without strain effect when the QD height is large (＞ 3.8 nm),but the status is opposite when the QD height is small (＜ 3.8 nm).The height of GaN QDs must be less than 5.5 nm for an efficient electron-hole recombination process due to the strain effect.The emission wavelength decreases linearly and the electron-hole recombination rate increases almost linearly with applied hydrostatic pressure.The hydrostatic pressure has a remarkable influence on the emission wavelength for large QDs,and has a significant influence on the electron-hole recombination rate for small QDs.Furthermore,the present numerical outcomes are in qualitative agreement with previous experimental findings under zero pressure.关键词
GaN quantum dots/ excitons/ strain/ hydrostatic pressureKey words
GaN quantum dots/ excitons/ strain/ hydrostatic pressure引用本文复制引用
Zheng Dongmei,Wang Zongchi,Xiao Boqi..Correlated electron-hole transitions in wurtzite GaN quantum dots: the effects of strain and hydrostatic pressure[J].半导体学报（英文版）,2012,33(5):6-12,7.基金项目
Project supported by the National Natural Science Foundation of China (No.11102100) and the Technology Projects of the Education Bureau of Fujian Province,China (No.JK2009038). （No.11102100）
