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Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films

Huang Kai Lü Jianguo Zhang Li Tang Zhen Yu Jiangying Li Ping Liu Feng

半导体学报(英文版)2012,Vol.33Issue(5):21-25,5.
半导体学报(英文版)2012,Vol.33Issue(5):21-25,5.DOI:10.1088/1674-4926/33/5/053003

Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films

Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films

Huang Kai 1Lü Jianguo 2Zhang Li 1Tang Zhen 1Yu Jiangying 1Li Ping 1Liu Feng3

作者信息

  • 1. Department of Mathematics and Physics, Anhui University of Architecture, Hefei 230601, China
  • 2. Electronics and Information Engineering, Hefei Normal University, Hefei 230601, China
  • 3. Schoolof Mathematics and Physics, Anhui Polytechnic University, Wuhu 241000, China
  • 折叠

摘要

Abstract

Undoped and Mg-doped ZnO thin films were deposited on Si (111) and quartz substrates by using the sol-gel method.Microstructure,surface topography and water contact angle of the thin films have been measured by X-ray diffraction (XRD),an atomic force microscope (AFM) and water contact angle apparatus,respectively.The XRD results show that all the thin films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate.With the increase of Mg concentration,the RMS roughness increases from 2.14 to 9.56 nm and the contact angle of the un-irradiated thin films decreases from 89° to 82°.The wetting behavior of the resulting films can be reversibly switched from hydrophobic to hydrophilic,through alternation of UV illumination and dark storage.The light-induced efficiency of the thin films increases with the increase of Mg concentration.

关键词

ZnO/ sol-gel/ Surface topography/ hydrophilicity

Key words

ZnO/ sol-gel/ Surface topography/ hydrophilicity

引用本文复制引用

Huang Kai,Lü Jianguo,Zhang Li,Tang Zhen,Yu Jiangying,Li Ping,Liu Feng..Effect of magnesium doping on the light-induced hydrophilicity of ZnO thin films[J].半导体学报(英文版),2012,33(5):21-25,5.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.51102072,11104001) and the Natural Science Foundation of Anhui Higher Education Institution of China (Nos.K J2010A284,K J2010B172,K J2010B024). (Nos.51102072,11104001)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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