半导体学报（英文版）2012，Vol.33Issue(5)：57-60,4.DOI:10.1088/1674-4926/33/5/054006
Novel SOI double-gate MOSFET with a P-type buried layer
Novel SOI double-gate MOSFET with a P-type buried layer
摘要
Abstract
An ultra-low specific on-resistance (Ron.sp) integrated silicon-on-insulator (SOI) double-gate triple RESURF (reduced surface field) n-type MOSFET (DG T-RESURF) is proposed.The MOSFET features two structures:an integrated double gates structure (DG) that combines a planar gate with an extended trench gate,and a p-type buried layer (BP) in the n-type drift region.First,the DG forms dual conduction channels and shortens the forward current path,so reducing Ron,sp.The DG works as a vertical field plate to improve the breakdown voltage (BV) characteristics.Second,the BP forms a triple RESURF structure (T-RESURF),which not only increases the drift doping concentration but also modulates the electric field.This results in a reduced Ron,sp and an improved BV.Third,the extended trench gate and the BP linked with the p-body region reduce the sensitivity of the BV to position of the BP The BV of 325 V and Ron,sp of 8.6 mΩ·cm2 are obtained for the DG T-RESURF by simulation.Ron,sp of DG T-RESURF is decreased by 63.4％ in comparison with a planar-gate single RESURF MOSFET (PG S-RESURF),and the BV is increased by 9.8％.关键词
SOI/ double gates/ specific on-resistance/ RESURF/ breakdown voltageKey words
SOI/ double gates/ specific on-resistance/ RESURF/ breakdown voltage引用本文复制引用
Yao Guoliang,Luo Xiaorong,Wang Qi,Jiang Yongheng,Wang Pei,Zhou Kun,Wu Liiuan,Zhang Bo,Li Zhaoji..Novel SOI double-gate MOSFET with a P-type buried layer[J].半导体学报（英文版）,2012,33(5):57-60,4.基金项目
Project supported by the National Natural Science Foundation of China (Nos.60806025,60976060) and the State Key Laboratory of Electronic Thin Films and Integrated Devices,China (No.CXJJ201004). （Nos.60806025,60976060）
