衬底温度和溅射功率对AZO薄膜性能的影响OA北大核心CSCDCSTPCD

Al-doped ZnO （AZO）transparent conductive films for electrode materials were prepared on glass slides by RF magnetron sputtering method. Structural, optical, and electrical properties of the films deposited under different substrate temperatures and sputtering power were characterized and analyzed. The results show that films deposited under various conditions have obvious （002） preferred orientation without changing the hexagonal wurtzite structure. The resistivity of the films decreases with increase of the substrate temperature and decreases first and then increases with promoting of the sputtering power. When the substrate temperature is 400 ℃ and the sputtering power is 200 W, the resistivity is minimum of 1.53 × 10 ^-5 Ω · m. The average visible transmittance of all is above 8%, and the optical band gap has the same variation trend with the carrier concentration, maximum of 3.52eV.