强激光与粒子束2012，Vol.24Issue(5)：1103-1106,4.DOI:10.3788/HPLPB20122405.1103
铪离子等离子体源离子注入铜基体的数值模拟
Numerical simulation of Hf ion plasma source ion implantation in Cu substrate
王加梅 1赵青 2武洪臣1
作者信息
- 1. 电子科技大学物理电子学院,成都610054
- 2. 中航工业北京航空制造工程研究所高能束流加工技术国家级重点实验室,北京100024
- 折叠
摘要
Abstract
The Monte Carlo code SRIM was used to simulate the process of Hf ion plasma source ion implantation in Cu substrate. The relationship between energy and stopping power, the relationship between ion energy and range, and ion distribution of different implantation conditions were simulated. The results show that, nuclear stopping power dominates when the energy is lower than 6 MeV, otherwise electronic stopping power dominates. There are a Bragg peak of the energy deposition process and the phenomenon that the mass deposition area concentrates, and the range generally increases as the energy increases.关键词
等离子体源离子注入/蒙特卡罗方法/数值模拟/表面改性Key words
plasma source ion implantation/Monte Carlo method/numerical simulation/surface modification分类
数理科学引用本文复制引用
王加梅,赵青,武洪臣..铪离子等离子体源离子注入铜基体的数值模拟[J].强激光与粒子束,2012,24(5):1103-1106,4.
