物理学报2012，Vol.61Issue(12)：511-516,6.
新型电子俘获型光存储材料Sr2Sn04：Sb3＋的发光性能研究
The luminescence properties of a novel electron trapped material Sr2SnOi：Sb3＋ for optical storage
摘要
Abstract
A novel electron trapped material Sr2SnO4：Sb3＋ for optical storage is successfully obtained by conventional solid state method at 1300 °C It indicates that the 1So - 3p1 （208 nm） and 1So -3P1 （265 nm） transitions of Sb3＋ are the most efficient writing light source. Its emission covers 400-700 nm and can be attributed to 3po,1 -1So transition of Sb3＋. We can observe yellowish white light and its color coordination is （0.341, 0.395）. The thermoluminescence of Sr2SnO4：Sb3＋ contains four peaks at about 39 °C, 124 °C, 193 °C and 310 °C, respectively. The intensity of peak at 39 °C is low and thus it has a weak afterglow which can last only 140 s. However, even after putting it in dark for I day, the peak at 310 C can still keep 45.6% of its original intensity and can be efficiently stimulated by 980 nm infrared laser. As a conclusion, the Sr2SnO4：Sb3＋ is a promising electron trapping material for application in optical storage.关键词
Sr2SnO4：Sb3＋/红外上转换光激励/光存储Key words
Sr2SnO4 :Sb3+/photostimulated luminescence/optical storage分类
信息技术与安全科学引用本文复制引用
王治龙,郑贵森,王世钦,秦青松,周宏亮,张加驰..新型电子俘获型光存储材料Sr2Sn04：Sb3＋的发光性能研究[J].物理学报,2012,61(12):511-516,6.基金项目
国家自然科学青年基金（批准号：10904057）,甘肃省中医药科研立项课题（批准号：GZK-2010-54）,国家大学生创新性实验计划（批准号：101073005）和中央高校科研业务费（批准号：Lzjbky.2011-125）资助的课题. （）
