宇航材料工艺2012，Vol.42Issue(3)：59-62,67,5.
工艺参数对SiC单晶片切割表面质量的影响
Influence of Process Parameters on SiC Wafers Surface Quality
摘要
Abstract
Surface quality of SiC wafers has a great influence on its subsequent semiconductor device manufacturing, however, SiC cut processing is very difficult because of its high hardness and high brittleness. Based on reciprocating electroplated diamond wire saw cutting single-crystal SiC experiments and the combinations of sawing parameters are designed by using the one-factor and the orthogonal method. The influences of work-piece rotating rate, wire saw feeding rate, and work-piece feeding rate and wire saw wear on wafers surface roughness and 3-d topography characteristic was studied. The results indicate that wafers surface quality improvement, and scratches reduce and becomes shallow depth when additional work-piece rotation movement; the surface roughness decreases with the work-piece rotating rate, wire saw rate, decrease of work-piece feeding rate, and the surface roughness increases with the wire saw wear; the influence is much more of work-piece rotating rate and work-piece feeding rate on the wafers surface quality and roughness compare with wire saw rate and wire saw wear; It should reasonably determine the cutting parameters, especially work-piece feed rate based on the comprehensively considered cutting efficiency and loss of wire saw.关键词
金刚石线锯/工件旋转/SiC单晶片/工艺参数/表面质量Key words
Diamond wire saw/Work-piece rotates/SiC wafers/Process parameters/Surface quality引用本文复制引用
王肖烨,李言,李淑娟,袁启龙,杨明顺..工艺参数对SiC单晶片切割表面质量的影响[J].宇航材料工艺,2012,42(3):59-62,67,5.基金项目
国家自然科学基金资助项目(51175420) （51175420）
陕西省科技攻关基金资助项目(2010k09-01) （2010k09-01）
宝鸡文理学院院级重点项目(ZK11164) （ZK11164）
陕西省教育厅重点资助项目(12JK0668) （12JK0668）
