液晶与显示2012，Vol.27Issue(3)：303-307,5.DOI:10.3788/YJYXS20122703.0303
镍硅化物诱导横向晶化制备高性能多晶硅薄膜晶体管
Fabrication of High Performance Poly-Si Thin Films Transistors by Nickel Silicide Induced Lateral Crystallization
摘要
Abstract
A new crystallization method is proposed for poly-Si thin film transistors by Ni silicide induced lateral crystallization. The poly-Si thin films were characterized by micro-Raman spectroscopy. Auger electronic spectroscopy and atomic force microscopy. The poly-Si thin film transistor is also fabricated using this poly-Si as active layer. And the electrical properties are obtained from ID-IC transfer curve measurements. Compared with the thin film transistor prepared using conventional Ni induced lateral crystallization method, the fabricated poly-Si thin film transistor showed lower leakage current and higher field-effect mobility. It was attributed to the reduction of Ni concentration in the poly-Si channel. Also, the trap states in grain boundaries were decreased.关键词
镍硅化物/金属诱导横向晶化/多晶硅薄膜晶体管Key words
Ni silicide/metal induced lateral crystallization/ poly-Si thin film transistors分类
信息技术与安全科学引用本文复制引用
彭尚龙,胡多凯,贺德衍..镍硅化物诱导横向晶化制备高性能多晶硅薄膜晶体管[J].液晶与显示,2012,27(3):303-307,5.基金项目
国家自然科学基金青年项目(No.61106006) （No.61106006）
中央高校基本科研业务费专项基金 （）
