液晶与显示2012，Vol.27Issue(3)：313-317,5.DOI:10.3788/YJYXS20122703.0313
高性能顶栅结构有机薄膜晶体管
High Performance Organic Thin Film Transistor Based on Top-Gate Configuration
摘要
Abstract
Organic thin film transistors based on Weak Epitaxy Growth (WEG) technology are fabricated with two different design: top-gate and bottom-gate configurations. The active layer materials of the OTFT are p-6P and vanadyl phthalocyanine (VOPc). The two struc- tural OTFTs are prepared under the same process conditions, and it is found that the device performance is different. The mobility of top-gate OTFT is much higher than that of the bottom-gate OTFT. A high mobility of 1. 6 cm2/V·s is obtained in the top-gate structure. The differentiation of top-gate and bottom-gate OTFTs is studied by Weak Epitaxy Growth (WEG) technology, and the reasons of higher mobility OTFT based on the top-gate configuration is explained.关键词
有机薄膜晶体管/顶栅结构/弱外延/氧钒酞菁Key words
organic thin film transistor/top-gate configuration/ weak epitaxy growth/ VOPc分类
信息技术与安全科学引用本文复制引用
洪飞,谭莉,朱棋锋,向长江,韩学斌,张其国,郭晓东,申剑锋..高性能顶栅结构有机薄膜晶体管[J].液晶与显示,2012,27(3):313-317,5.基金项目
上海市科委科研项目(No.10dz1100300) （No.10dz1100300）
