半导体学报（英文版）2012，Vol.33Issue(6)：14-19,6.DOI:10.1088/1674-4926/33/6/064001
The design of electroabsorption modulators with negative chirp and very low insertion loss
The design of electroabsorption modulators with negative chirp and very low insertion loss
Kambiz Abedi1
作者信息
- 1. Department of Electrical Engineering,Faculty of Electrical and Computer Engineering,Shahid Beheshti University,G.C.,Evin 1983963113,Tehran,Iran
- 折叠
摘要
Abstract
Electroabsorption modulators (EAMs) with negative chirp and very low insertion loss are numerically designed with asymmetric intra-step-barrier coupled double strained quantum wells (AICD-SQWs) based on InGaAlAs material.For this purpose,the electroabsorption coefficient is calculated over a range of wells layer strain from compressive (CS) to tensile (TS).The chirp parameter and insertion loss for TE input light polarization are evaluated from the calculated electroabsorption spectra,and their Kramers-Kr(o)nig transformed refractive index changes.The results of the numerical simulation show that the best range of left and right wells strain for EAMs based on AICD-SQWs with negative chirp and very low insertion loss are from 0.032％ to 0.05％ (TS) and -0.52％ to -0.50％ (CS),respectively.关键词
electroabsorption modulators/AICD-SQW/strain/chirp/insertion lossKey words
electroabsorption modulators/AICD-SQW/strain/chirp/insertion loss引用本文复制引用
Kambiz Abedi..The design of electroabsorption modulators with negative chirp and very low insertion loss[J].半导体学报（英文版）,2012,33(6):14-19,6.
