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首页|期刊导航|半导体学报(英文版)|Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

Xiao Wenbo He Xingdao Gao Yiqing Zhang Zhimin Liu Jiangtao

半导体学报(英文版)2012,Vol.33Issue(6):47-50,4.
半导体学报(英文版)2012,Vol.33Issue(6):47-50,4.DOI:10.1088/1674-4926/33/6/064008

Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias

Xiao Wenbo 1He Xingdao 1Gao Yiqing 1Zhang Zhimin 1Liu Jiangtao2

作者信息

  • 1. Key Laboratory of Non-Destructive Test of Ministry of Education,Nanchang Hangkong University,Nanchang 330063,China
  • 2. Department of Physics,Nanchang University,Nanchang 330031,China
  • 折叠

摘要

Abstract

The far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge solar cell are investigated under forward DC bias at room temperature in dark conditions.An electroluminescence viewgraph shows the clear device structures,and the electroluminescence intensity is shown to increases exponentially with bias voltage and linearly with bias current.The results can be interpreted using an equivalent circuit of a single ideal diode model for triple-junction solar cells.The good fit between the measured and calculated data proves the above conclusions.This work is of guiding significance for current solar cell testing and research.

关键词

triple-junction solar cell/electroluminescence/characteristics

Key words

triple-junction solar cell/electroluminescence/characteristics

引用本文复制引用

Xiao Wenbo,He Xingdao,Gao Yiqing,Zhang Zhimin,Liu Jiangtao..Far-infrared electroluminescence characteristics of an InGaP/InGaAs/Ge triple-junction solar cell under forward DC bias[J].半导体学报(英文版),2012,33(6):47-50,4.

基金项目

Project supported by the National Natural Science Foundation of China (Nos.10904059,41066001,61072131,61177096),the Aeronautical Science Foundation of China (No.2010ZB56004),the Scientific Research Foundation of Jiangxi Provincial Department of Education (No.GJJ11176),the Open Fund of the Key Laboratory of Nondestructive Testing of Ministry of Education,Nanchang Hangkong University (No.ZD201029005),the Natural Science Foundation of Jiangxi Province,China (Nos.2009GQW0017,2009GZW0024),and the Graduate Innovation Base of Jiangxi Province,China. (Nos.10904059,41066001,61072131,61177096)

半导体学报(英文版)

OACSCDCSTPCDEI

1674-4926

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