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H-plasma-assisted aluminum induced crystallization of amorphous silicon

Li Juan Liu Ning Luo Chong Meng Zhiguo Xiong Shaozhen Hoi Sing Kwok

半导体学报（英文版）2012，Vol.33Issue(6)：125-128,4.

半导体学报（英文版）2012，Vol.33Issue(6)：125-128,4.DOI:10.1088/1674-4926/33/6/066003

H-plasma-assisted aluminum induced crystallization of amorphous silicon

Li Juan ¹Liu Ning ¹Luo Chong ¹Meng Zhiguo ¹Xiong Shaozhen ¹Hoi Sing Kwok²

作者信息

1. Institute of Photo-Electronics,Nankai University,Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Tianjin 300071,China
2. Department of Electronic and Computer Engineering,The Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong,China
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摘要

Abstract

A technique to improve and accelerate aluminum induced crystallization (AIC) by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm2/(V·s).The possible mechanism of AIC assisted by hydrogen radicals is also discussed.

关键词

poly-silicon/H-plasma/aluminum induced crystallization

Key words

poly-silicon/H-plasma/aluminum induced crystallization

引用本文复制引用

Li Juan,Liu Ning,Luo Chong,Meng Zhiguo,Xiong Shaozhen,Hoi Sing Kwok..H-plasma-assisted aluminum induced crystallization of amorphous silicon[J].半导体学报（英文版）,2012,33(6):125-128,4.

基金项目

Project supported by the National Natural Science Foundation of China (No.61076006) and the National High Technology Research and Development Program of China (No.2008AA03A335). （No.61076006）

半导体学报（英文版）

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ISSN：1674-4926

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