半导体学报（英文版）2012，Vol.33Issue(7)：29-33,5.DOI:10.1088/1674-4926/33/7/074002
A different approach for determining the responsivity of n+p detectors using scanning electron microscopy
A different approach for determining the responsivity of n+p detectors using scanning electron microscopy
Omeime Xerviar Esebamen 1G(o)ran Thungstr(o)m 1Hans-Erik Nilsson1
作者信息
- 1. Department of Information Technology and Media,Mid Sweden University,Holmgatan 10,SE-85170,Sundsvall Sweden
- 折叠
摘要
Abstract
This paper explores an alternative to the standard method of studying the responsivities(the input-output gain) and other behaviours of detectors at low electron energy The research does not aim to compare the results of differently doped n+p detectors; its purpose is to provide an alternative characterization method (using scanning electron microscopy) to those used in previous studies on the responsivity of n+p doped detectors as a function of the electron radiation energy and other interface parameters.关键词
scanning electron microscopy/responsivity/n+p detectorKey words
scanning electron microscopy/responsivity/n+p detector引用本文复制引用
Omeime Xerviar Esebamen,G(o)ran Thungstr(o)m,Hans-Erik Nilsson..A different approach for determining the responsivity of n+p detectors using scanning electron microscopy[J].半导体学报（英文版）,2012,33(7):29-33,5.
