半导体学报（英文版）2012，Vol.33Issue(7)：56-59,4.DOI:10.1088/1674-4926/33/7/074008
Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer
Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer
Zhang Xiaojie 1Yang Ruixia 1Wang Jinghui2
作者信息
- 1. College of Information Engineering,Hebei University of Technology,Tianjin 300130,China
- 2. The 13th Research Institute,China Electronics Technology Group Corporation,Shijiazhuang 050051,China
- 折叠
摘要
Abstract
The light output power of an InGaN/GaN light-emitting diode is improved by using a SiO2/TiO2 distributed Bragg reflector (DBR) and an Al mirror as a hybrid reflective current blocking layer (CBL),Such a hybrid reflective CBL not only plays the role of the CBL by enhancing current spreading but also plays the role of a reflector by preventing photons near the p-electrode pad from being absorbed by a metal electrode.At a wavelength of 455 nm,a 1.5-pair of SiO2/TiO2 DBR and an Al mirror (i.e.1.5 -pair DBR+Al) deposited on a p-GaN layer showed a normal-incidence reflectivity as high as 97.8％.With 20 mA current injection,it was found that the output power was 25.26,24.45,23.58 and 22.45 mW for the LED with a 1.5-pair DBR+Al CBL,a 3 pair DBR CBL,SiO2 CBL and without a CBL,respectively.关键词
distributed Bragg reflector/Al/current blocking layer/light-emitting diodeKey words
distributed Bragg reflector/Al/current blocking layer/light-emitting diode引用本文复制引用
Zhang Xiaojie,Yang Ruixia,Wang Jinghui..Enhanced light output power in InGaN/GaN light-emitting diodes with a high reflective current blocking layer[J].半导体学报（英文版）,2012,33(7):56-59,4.
