半导体学报（英文版）2012，Vol.33Issue(7)：60-64,5.DOI:10.1088/1674-4926/33/7/074009
Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device
Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device
Jiang Yibo 1Du Huan 1Han Zhengsheng1
作者信息
- 1. Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China
- 折叠
摘要
Abstract
The polysilicon p-i-n diode displays noticeable process compatibility and portability in advanced technologies as an electrostatic-discharge (ESD) protection device.This paper presents the reverse breakdown,current leakage and capacitance characteristics of fabricated polysilieon p-i-n diodes.To evaluate the ESD robustness,the forward and reverse TLP Ⅰ-Ⅴ characteristics were measured.The polysilicon p-i-n diode string was also investigated to further reduce capacitance and fulfill the requirements of tunable cut-in or reverse breakdown voltage.Finally,to explain the effects of the device parameters,we analyze and discuss the inherent properties of polysilicon p-i-n diodes.关键词
polysilicon p-i-n diode/ESD/polysilicon p-i-n diode stringKey words
polysilicon p-i-n diode/ESD/polysilicon p-i-n diode string引用本文复制引用
Jiang Yibo,Du Huan,Han Zhengsheng..Investigation of the polysilicon p-i-n diode and diode string as a process compatible and portable ESD protection device[J].半导体学报（英文版）,2012,33(7):60-64,5.
