成都大学学报：自然科学版2012，Vol.31Issue(2)：133-135,3.
砷化镓光导开关中流注辐射实验理论分析
Theoretical Analysis of Streamer Radiation in GaAs Photoconductive Semiconductor Switches （PCSS）
摘要
Abstract
The radiative recombination from one end of a streamer in high gain GaAs photoconductive semiconductor switches （PCSS） was analyzed. First, the radiative recombination coegicient of monochromatic light （890 nm） was proposed. The equation of spontaneous radiation of the monochromatic light was deduced. The computed results were well consistent with the reported experimental observations. This demonstrates that the model of the spontaneous radiation from the tip of the streamer is reasonable.关键词
砷化镓光导开关/流注/辐射复合系数/辐射模型Key words
GaAs photoconductive semiconductor switches (PCSS)/streamer/radiative recombination coef-ficient/radiative model分类
信息技术与安全科学引用本文复制引用
刘鸿,郑理,程浩,杨维,杨洪军,郑勇林,陈斌,宋刚..砷化镓光导开关中流注辐射实验理论分析[J].成都大学学报：自然科学版,2012,31(2):133-135,3.基金项目
四川省科技厅基础应用研究计划（2010JY0160）资助项目. （）
