红外与毫米波学报2012，Vol.31Issue(3)：226-230,5.DOI:10.3724/SP.J.1010.2012.00226
高功率1060nm半导体激光器波导结构优化
Optimization of waveguide structure for high power 1060 nm diode laser
摘要
Abstract
The imperfects in the wafer structure of high power 1060 nm diode laser, which prevents the improvement of laser power, was analyzed. Base on the analyzing results, the quantum well and the waveguide form were optimized. The relationship between waveguide width and laser power was simulated. According to the distribution of various modes, the position of quantum well was optimized and an asymmetric wide waveguide structure was designed. The calculation results of confinement factor for various modes show that the optimized asymmetric waveguide structure could increase the loss of high order modes while decrease the confinement factor of fundamental mode.关键词
高功率半导体激光器/1060nm/波导宽度/模式Key words
high power diode laser/ 1060 nm/ waveguide width/ mode分类
信息技术与安全科学引用本文复制引用
李特,郝二娟,李再金,王勇,芦鹏,曲轶..高功率1060nm半导体激光器波导结构优化[J].红外与毫米波学报,2012,31(3):226-230,5.基金项目
国家自然科学基金(非对称异质结构1060nm半导体激光器,61107054) （非对称异质结构1060nm半导体激光器,61107054）
国家自然科学基金(集成紫外生物芯片研究,60976044) （集成紫外生物芯片研究,60976044）
吉林省科技厅项目(高峰值功率、窄脉冲垂直腔面发射激光器,2008335) （高峰值功率、窄脉冲垂直腔面发射激光器,2008335）
