人工晶体学报2012，Vol.41Issue(3)：584-587,4.
热交换法生长c面取向大尺寸蓝宝石晶体的研究
Study on c-plane Large Size Sapphire Growth by Heat-exchange Method
张雪平1
作者信息
- 1. 湖南大学物理与微电子科学学院,长沙410082
- 折叠
摘要
Abstract
The c plane sapphire with size of φ170 mm x 160 mm, weight of 12 kg was grown by heat-exchange method. The crystal is transparent, and no particle/bubble in the crystal. According to the interference figure, the fringes are distorted in the center of the crystal because of the stress. After the chemical etching, the triangular etch pits appears through the microscope, and the etch pits density is low, just 1.98 x 103 Pits/cm2. The FWHM is so narrow, the crystal quality is good.关键词
蓝宝石晶体/热交换法/c向生长/位错密度Key words
sapphire crystal/ heat-exchange method/ c-plane growth/ dislocation density分类
数理科学引用本文复制引用
张雪平..热交换法生长c面取向大尺寸蓝宝石晶体的研究[J].人工晶体学报,2012,41(3):584-587,4.
