人工晶体学报2012，Vol.41Issue(3)：636-641,6.
p-ZnO薄膜及其异质结的光电性质
Optical and Electrical Properties of p-type ZnO Thin Films and Heter-junctions
摘要
Abstract
P-doped p-type ZnO(p-ZnO) thin films and p-ZnO/n-Si were prepared on high phosphorus-doped Si substrates as the phosphorus doping source by radio frequency ( RF) magnetron sputtering in O2 and Ar mixed atmosphere. The optical-electric properties and structure of the films were characterized by photoluminescence spectrum (PL), Hall effect, I-V characteristic, scanning electron microscopy (SEM) and X-ray diffraction (XRD) to study the optical-electric and structure properties. The XRD results show that the ZnO: P film obtained with a (0002) high orientation, the strong near band edge UV emission peak near 3.33 eV is observed in PL spectrum, and green light emission peaks are also obtained around 2.69 eV. The p-ZnO/n-Si heterojunction has good rectification character, and the corresponding hole concentration and hole mobility of the p-ZnO film is 8. 982 x 1017 cm-3 and 9. 595 cm2/V ? s, respectively. This reveals that the ZnO: P film is really p-type behavior.关键词
磁控溅射/p型ZnO薄膜/磷掺杂/异质结Key words
magnetron sputtering/ p-type ZnO film/ phosphorus doped/ heter-junction分类
数理科学引用本文复制引用
朱慧群,李毅,丁瑞钦,王忆,黄洁芳,张锐华..p-ZnO薄膜及其异质结的光电性质[J].人工晶体学报,2012,41(3):636-641,6.基金项目
国家高技术研究发展计划(863)(2006AA03Z348) （863）
上海市教育委员会科研创新重点项目(10ZZ94) （10ZZ94）
上海领军人才培养计划 （）
广东省自然科学基金(10152902001000025) （10152902001000025）
江门市自然科学和基础科学领域科技攻关计划项目(江科[2009]38号) （江科[2009]38号）
五邑大学重点科研项目资助 （）
