四川大学学报（自然科学版）2012，Vol.49Issue(3)：661-664,4.DOI:10.3969/j.issn.0490-6756.2012.03.034
Te掺杂AlSb多晶薄膜的性质研究
The studyon Te-doped AlSb polycrystalline thin films
摘要
Abstract
Te-doped AlSb polycrystalline films were prepared by depositing Te thin film on as-deposited AlSb thin films and then annealed. Their structural, electrical and electronic properties were also studied. The results show that after post annealing, some AlxTe, compounds can be detected in the samples. These AlSb:Te thin films show complex abnormal conductivity-temperature properties at the temperature range of 150℃~170℃ , and the samples annealed under this condition show n-type semiconductors while others show p-type, which has not been reported elsewhere before.关键词
Te掺杂/AlSb多晶薄膜Key words
Te dope, AlSb polycrystalline thin films分类
信息技术与安全科学引用本文复制引用
郝霞,王文武,江洪超,赵宇,冷丹,武莉莉,冯良桓,李卫,张静全,曾广根..Te掺杂AlSb多晶薄膜的性质研究[J].四川大学学报（自然科学版）,2012,49(3):661-664,4.基金项目
国家重点基础研究发展计划(973计划)(2011CBA00708) （973计划）
