物理学报2012，Vol.61Issue(13)：425-431,7.
ITO退火对GaN基LED电学特性的影响
The effect of ITO annealing on electrical characteristic of GaN based LED
刘建朋 1朱彦旭 1郭伟玲 1闫微微 1吴国庆1
作者信息
- 1. 北京工业大学,北京光电子技术实验室,北京100124
- 折叠
摘要
Abstract
In the recent years, more and more light-emitting diodes use indium tin oxide （ITO） as the current spreading layer. But if there is not any treatment, the electrical properties of light emitting diode are very poor. So to get excellent electrical properties of light emitting diode, annealing is an effective method to improve the electrical properties of light emitting diode using indium tin oxide as the current spreading layer. However, the annealing time and temperature can affect the electrical property of light emitting diode individually. In order to investigate this problem, we measured the series resistance and ideality factor of the light emitting diode got under different annealing time and annealing temperature. According to the model proposed by Jay M. Shah, we can inferred the characteristics of indium tin oxide and P-type GaN contact. The results showed that： the electrical properties of the light-emitting diode can reach an excellent value with increasing annealing temperature and time, and if continuing to increase in temperature or time, it can lead to a decline in light-emitting diode electrical properties. It is very helpful to optimize the annealing temperature and time and manufacture excellent electrical properties of devices.关键词
铟锡氧化物（ITO）/退火/理想因子/串联电阻Key words
ITO/annealed/ideality factors/series resistance分类
数理科学引用本文复制引用
刘建朋,朱彦旭,郭伟玲,闫微微,吴国庆..ITO退火对GaN基LED电学特性的影响[J].物理学报,2012,61(13):425-431,7.
