物理学报2012，Vol.61Issue(13)：511-517,7.
GaN基高压直流发光二极管制备及其性能分析
The preparation and performance analysis of GaN-based high-voltage DC light emitting diode
摘要
Abstract
The design and the preparation of GaN-based high-voltage DC light emitting diode are realized. It is found that the device, whose chip structure is truncated pyramid using the epitaxial wafer whose subsrate is a patterned sapphire substrate, has a higher luminous efficiency than other chip structures. The luminous efficiency increases up to 116.06 lm/W when the device is packaged into white LED at a color temperature of 4500 K which is driven by 20 mA, and the corresponding voltage is 50 V. The I-V curve shows that the threshold voltage is 36 V, corresponding to a drive current of 1.5 mA. The optical power increases approximately linearly with the increase of driving current when the driving current increases from 15 mA to 50 mA, and the luminous efficiency in this range decreases more slowly with the increase of driving current, indicating that the GaN-based high-voltage DC LED is favourably driven by large current density, and severe efficiency droop will not appear as the drive current density increases, which offers a new idea for studying and solving the efficiency droop problem from the chip level.关键词
GaN基高压直流发光二极管/蓝宝石图形衬底/正梯形芯粒结构/发光效率Key words
GaN-based high-voltage DC light emitting diode/pattern sapphire substrate/truncated pyramid chipstructure/luminous efficiency分类
信息技术与安全科学引用本文复制引用
曹东兴,郭志友,梁伏波,杨小东,黄鸿勇..GaN基高压直流发光二极管制备及其性能分析[J].物理学报,2012,61(13):511-517,7.基金项目
国家自然科学基金（批准号：60877069）资助的课题 （）
