半导体学报（英文版）2012，Vol.33Issue(8)：32-36,5.DOI:10.1088/1674-4926/33/8/083003
Influence of surface preparation on atomic layer deposition of Pt films
Influence of surface preparation on atomic layer deposition of Pt films
摘要
Abstract
We report Pt deposition on a Si substrate by means of atomic layer deposition (ALD) using (methylcyclopentadienyl) trimethylplatinum (CH3CsH4Pt(CH3)3) and O2.Silicon substrates with both HF-last and oxidelast surface treatments are employed to investigate the influence of surface preparation on Pt-ALD.A significantlylonger incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate.An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing.A plausible explanation to the observed difference of Pt-ALD is discussed.关键词
Pt/atomic layer deposition/surface treatment/interfacial oxide layerKey words
Pt/atomic layer deposition/surface treatment/interfacial oxide layer引用本文复制引用
Ge Liang,Hu Cheng,Zhu Zhiwei,Zhang Wei,Wu Dongping,Zhang Shili..Influence of surface preparation on atomic layer deposition of Pt films[J].半导体学报（英文版）,2012,33(8):32-36,5.基金项目
Project supported by the National S&T Major Project 02 (No.2009ZX02035-003),the National Natural Science Foundation of China (No.61176090),and the Program for Professor of Special Appointment (Eastern Scholar) at Shanghai Institutions of Higher Learning. （No.2009ZX02035-003）
