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Characteristics of a GaN-based Gunn diode for THz signal generation

R K Parida N C Agrawala G N Dash A K Panda

半导体学报（英文版）2012，Vol.33Issue(8)：37-43,7.

半导体学报（英文版）2012，Vol.33Issue(8)：37-43,7.DOI:10.1088/1674-4926/33/8/084001

Characteristics of a GaN-based Gunn diode for THz signal generation

R K Parida ¹N C Agrawala ²G N Dash ³A K Panda⁴

作者信息

1. ITER, Siksha ‘O' Anusandhan University, Bhubaneswar, Odisha, 751030, India
2. Rengali College, Sambalpur, Odisha, India
3. Sambalpur University, Sambalpur, Odisha, 768019, India
4. National Institute of Science & Technology, Berhampur, Odisha, 761008, India
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摘要

Abstract

A generalized large-signal computer simulation program for a Gunn oscillator has been developed.The properties of a Gunn diode oscillator based on the widely explored GaN,are investigated using the developed program.The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and lnP diodes.An output power of 1400 kW/cm2 is achieved from the GaN Gunn diode,as compared to 4.9 kW/cm2 from a GaAs diode.

关键词

Gunn devices/semiconductor diodes/semiconductor materials/power/GaN

Key words

Gunn devices/semiconductor diodes/semiconductor materials/power/GaN

引用本文复制引用

R K Parida,N C Agrawala,G N Dash,A K Panda..Characteristics of a GaN-based Gunn diode for THz signal generation[J].半导体学报（英文版）,2012,33(8):37-43,7.

基金项目

Project supported by Department of Science and Technology,Government of India through SERC,FIST and TIFAC Program.The fourth author acknowledges the Regular Associate award of ICTP,Trieste,Italy. （）

半导体学报（英文版）

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ISSN：1674-4926

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