首页|期刊导航|半导体学报（英文版）|Optimization of a Cu CMP process modeling parameters of nanometer integrated circuits
半导体学报（英文版）2012，Vol.33Issue(8)：127-134,8.DOI:10.1088/1674-4926/33/8/086001
Optimization of a Cu CMP process modeling parameters of nanometer integrated circuits
Optimization of a Cu CMP process modeling parameters of nanometer integrated circuits
摘要
Abstract
A copper chemical mechanical polishing (Cu CMP) process is reviewed and analyzed from the view of chemical physics.Three steps Cu CMP process modeling is set up based on the actual process of manufacturing and pattern-density-step-height (PDSH) modeling from MIT.To catch the pattern dependency,a 65 nm testing chip is designed and processed in the foundry.Following the model parameter extraction procedure,the model parameters are extracted and verified by testing data from the 65 nm testing chip.A comparison of results between the model predictions and test data show that the former has the same trend as the latter and the largest deviation is less than 5 nm.Third party testing data gives further evidence to support the great performance of model parameter optimization.Since precise CMP process modeling is used for the design of manufacturability (DFM) checks,critical hotspots are displayed and eliminated,which will assure good yield and production capacity of IC.关键词
chemical mechanical polishing/process modeling/parameter extraction/modeling verification/hotspotKey words
chemical mechanical polishing/process modeling/parameter extraction/modeling verification/hotspot引用本文复制引用
Ruan Wenbiao,Chen Lan,Ma Tianyu,Fang Jingjing,Zhang He,Ye Tianchun..Optimization of a Cu CMP process modeling parameters of nanometer integrated circuits[J].半导体学报（英文版）,2012,33(8):127-134,8.基金项目
Project supported by the National Major Science and Technology Special Project of China During the 11th Five-Year Plan Period (No.2009ZX02023-4-2). （No.2009ZX02023-4-2）
