半导体学报（英文版）2012，Vol.33Issue(8)：135-138,4.DOI:10.1088/1674-4926/33/8/086002
High-speed through-silicon via filling method using Cu-cored solder balls
High-speed through-silicon via filling method using Cu-cored solder balls
摘要
Abstract
A novel low-cost and high-speed via filling method using Cu-cored solder balls was investigated for through-silicon via manufacture.Cu-cored solder balls with a total diameter of 100 μm were used to fill 150 μm deep,110 μm wide vias in silicon.The wafer-level filling process can be completed in a few seconds,which is much faster than using the traditional electroplating process.Thermo-mechanical analysis of via filling using solder,Cu and Cu-cored solder was carried out to assess the thermo-mechanical properties of the different filling materials.It was found that the vias filled with Cu-cored solder exhibit less thermal-mechanical stresses than solder-filled vias,but more than Cu-filled vias.关键词
microsystem packaging/through-silicon vias/filling method/metallization/thermal-mechanical propertiesKey words
microsystem packaging/through-silicon vias/filling method/metallization/thermal-mechanical properties引用本文复制引用
He Ran,Wang Huijuan,Yu Daquan,Zhou Jing,Dai Fengwei,Song Chongshen,Sun Yu,Wan Lixi..High-speed through-silicon via filling method using Cu-cored solder balls[J].半导体学报（英文版）,2012,33(8):135-138,4.基金项目
Project supported by the National S & T Major Projects (Nos.2009ZX02038,2011ZX02709) and the 100 Talents Programme of the Chinese Academy of Sciences. （Nos.2009ZX02038,2011ZX02709）
