半导体学报（英文版）2012，Vol.33Issue(9)：13-17,5.DOI:10.1088/1674-4926/33/9/092003
A tunneling piezoresistive model for polysilicon
A tunneling piezoresistive model for polysilicon
摘要
Abstract
Based on the trap model,the band structure and the conductive mechanism ofpolysilicon were analyzed,and then an equivalent circuit used to interpret the tunneling piezoresistive effect was proposed.Synthesizing the piezoresistive effect of the grain boundary region and grain neutral zone,a new piezoresistive model—a tunneling piezoresistive model is established.The results show that when the doping concentration is above 1020 cm-3,the piezoresistive coefficient of the grain boundary is higher than that of the neutral zone,and it increases with an increase in doping concentration.This reveals the intrinsic mechanism of an important experimental phenomena that the gauge factor of heavily doped polysilicon nano-films increases with an increase in doping concentration.关键词
polysilicon nanofilm/tunnelling piezoresistive effect/Gauge factor/piezoresistive propertiesKey words
polysilicon nanofilm/tunnelling piezoresistive effect/Gauge factor/piezoresistive properties引用本文复制引用
Chuai Rongyan,Wang Jian,Wu Meile,Liu Xiaowei,Jin Xiaoshi,Yang Lijian..A tunneling piezoresistive model for polysilicon[J].半导体学报（英文版）,2012,33(9):13-17,5.基金项目
Project supported by the National Natural Science Foundation of China (No.60776049),the Science and Technology Foundation of Liaoning Province (No.20072036),and the Fund of Liaoning Province Education Department (No.2007T130). （No.60776049）
