Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiationOACSCDCSTPCD
Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation
Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates.Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al2O3.Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite.This result may be attributed to the amorphous change of the graphi…查看全部>>
Jiang Ran;Meng Lingguo;Zhang Xijian;Hyung-Suk Jung;Cheol Seong Hwang
School of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaSchool of Physics, Shandong University, Jinan 250100, ChinaDepartment of Materials Science and Engineering, Seoul National University, Seoul 151-747, KoreaDepartment of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea
Al2O3high katomic layer depositiongraphene
Al2O3high katomic layer depositiongraphene
《半导体学报（英文版）》 2012 (9)
34-37,4
Project supported by the Independent Innovation Foundation of Shandong University,China (No.2010TS023),the China Postdoctoral Special Foundation (No.200902556),the China Postdoctoral Science Foundation (No.20080431176),and the Postdoctoral Innovation Foundation of Shandong Province,China (No.200702027).
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