首页|期刊导航|半导体学报（英文版）|Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation

Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation

Jiang Ran Meng Lingguo Zhang Xijian Hyung-Suk Jung Cheol Seong Hwang

半导体学报（英文版）2012，Vol.33Issue(9)：34-37,4.

半导体学报（英文版）2012，Vol.33Issue(9)：34-37,4.DOI:10.1088/1674-4926/33/9/093004

Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation

Jiang Ran ¹Meng Lingguo ¹Zhang Xijian ¹Hyung-Suk Jung ²Cheol Seong Hwang²

作者信息

1. School of Physics, Shandong University, Jinan 250100, China
2. Department of Materials Science and Engineering, Seoul National University, Seoul 151-747, Korea
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摘要

Abstract

Atomic layer deposition ofan Al2O3 dielectric on ultrathin graphite is studied in order to investigate the integration of a high k dielectric with graphite-based substrates.Electron beam irradiation on the graphite surface is followed by a standard atomic layer deposition of Al2O3.Improvement of the Al2O3 layer deposition morphology was observed when using this radiation exposure on graphite.This result may be attributed to the amorphous change of the graphite layers during electron beam irradiation.

关键词

Al2O3/high k/atomic layer deposition/graphene

Key words

Al2O3/high k/atomic layer deposition/graphene

引用本文复制引用

Jiang Ran,Meng Lingguo,Zhang Xijian,Hyung-Suk Jung,Cheol Seong Hwang..Atomic layer deposition of an Al2O3 dielectric on ultrathin graphite by using electron beam irradiation[J].半导体学报（英文版）,2012,33(9):34-37,4.

基金项目

Project supported by the Independent Innovation Foundation of Shandong University,China (No.2010TS023),the China Postdoctoral Special Foundation (No.200902556),the China Postdoctoral Science Foundation (No.20080431176),and the Postdoctoral Innovation Foundation of Shandong Province,China (No.200702027). （No.2010TS023）

半导体学报（英文版）

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ISSN：1674-4926

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