电子学报2012，Vol.40Issue(6)：1180-1184,5.DOI:10.3969/j.issn.0372-2112.2012.06.019
基于TRL的3mm波段变容二极管对建模方法
TRL-Based Modeling Method of Varactor Diodes for 3mm Millimeter-Wave Application
摘要
Abstract
Based on the simplified circuit model of the commercially available Varactor diode,TRL analysis on quartz is introduced in this paper for the analysis of the passive parts of the diode chip. The diodes chip model in 3mm is setup by the analysis of all the parasitic parameters and working environment. By using TRL arithmetic, the values of lumped elements in the diode chip model are determined. The measured on-wafer results agree well with simulated results of the diode chip. The methods of modified diodes chip model may find its applications in the design of millimeter circuits such as mixers and frequency multipliers.关键词
GaAs变容二极管/芯片电路模型/不连续性/毫米波Key words
GaAs Varactor diode/ chip circuit model/ discontinuity/ millimeter-wave引用本文复制引用
安大伟,于伟华,吕昕..基于TRL的3mm波段变容二极管对建模方法[J].电子学报,2012,40(6):1180-1184,5.基金项目
国家自然科学基金(No.41105009) （No.41105009）
国家“973”计划(No.20100B327505) （No.20100B327505）
