东南大学学报（自然科学版）2012，Vol.42Issue(4)：614-617,4.DOI:10.3969/j.issn.1001-0505.2012.04.007
与ONO反熔丝FPGA匹配的高压器件设计
High-voltage device applications in ONO antifuse FPGA
摘要
Abstract
A design of the high-voltage devices which matches antifuse-based FPGA (field programmable gate array) characteristics is presented. The 1. 0 ixm 2P2M ONO antifuse process of CETC NO. 58 Research Institute was used to design and produce a high-voltage nMOSFET. Particularly by way of once ion implantation and high temperature promotion, a deep junction HVNwell was created. By keeping 0. 2 μm space between gate and high-voltage injection, the conflict between the increase in the depth of junction and the speed and the reducing of low punch through breakdown voltage is resolved. To adjust the threshold voltage of the high-voltage nMOSFET by once ion implantation. Test results show that the breakdown voltage of high voltage nMOSFET can reach 21 to 23 V, which is far greater than the programming voltage of 13. 5 V. The saturation current is 4. 32 mA, which is significantly higher than that before the process improvement. The threshold voltage 0.78 V is matched with that of general device.关键词
高压器件/ONO型反熔丝/FPGAKey words
high-voltage device/ ONO antifuse/ field programmable gate array (FPGA)分类
信息技术与安全科学引用本文复制引用
周云波,于宗光,封晴,胡凯..与ONO反熔丝FPGA匹配的高压器件设计[J].东南大学学报（自然科学版）,2012,42(4):614-617,4.基金项目
江苏省"333工程"科研资助项目(BRA2011115). （BRA2011115）
