电子器件2012，Vol.35Issue(3)：263-266,4.DOI:10.3969/j.issn.1005-9490.2012.03.004
基于MESFET非线性模型的MOSFET DC建模技术
MOSFET DC Modeling Technique Based on Nonlinear MESFET Models
孟茜倩 1程加力 1高建军1
作者信息
- 1. 华东师范大学信息科学技术学院,上海200241
- 折叠
摘要
Abstract
Most of the popular MOSFET models have many complex parameters. Several popular nonlinear MESFET models are used to characterize the DC behavior of MOSFET. Parameters are extracted and conclusions can be drawn from the comparison between the simulated and measured MOSFET l-V curves and the 6 models' RMS errors that these 6 nonlinear MESFET models can be used to characterize the DC behavior of MOSFET. The more the parameters, the higher accuracy the model.关键词
CMOS器件/MOSFET模型/参数提取与模型仿真/MESFET模型/直流模型Key words
CMOS device/MOSFET model/parameter extraction and model simulation/ MESFET model/DC model分类
信息技术与安全科学引用本文复制引用
孟茜倩,程加力,高建军..基于MESFET非线性模型的MOSFET DC建模技术[J].电子器件,2012,35(3):263-266,4.
