发光学报2012，Vol.33Issue(5)：481-485,5.DOI:10.3788/fgxb20123305.0481
ZnO薄膜近带边紫外发光的研究
Investigation on Near Band Edge UV Luminescence of ZnO Thin Films
摘要
Abstract
High orientated undoped ZnO thin films were prepared on C-AL2O3 substrates by pulsed laser deposition (PLD) method and using ZnO ceramic target as resource material. The photolumi-nescence (PL) origin of the ZnO thin films was discussed in detailed. PL spectrum of ZnO thin films is dominated by donor-bound exciton (D0X) emission at low temperatures while the free exciton transition (FX) gradually dominates the spectrum at higher temperatures. It notes that one emission band A at around 3. 309 eV (7=10 K) can be clearly observed with increase in temperature up to room temperature. The mechanism of this emission band was investigated by the temperature dependence of PL spectra. The results can be attributed to the transition of conduction band electrons to acceptors (e,A°) , in which the acceptor binding energy was approximately 129 meV. However, the formation mechanism of the acceptor states need be investigated further.关键词
脉冲激光沉积/ZnO薄膜/光致发光Key words
pulsed laser deposition/ ZnO thin films/ photoluminescence分类
数理科学引用本文复制引用
黎小平,曹培江,宿世臣,贾芳,柳文军,朱德亮,马晓翠,吕有明..ZnO薄膜近带边紫外发光的研究[J].发光学报,2012,33(5):481-485,5.基金项目
国家自然科学基金(60976036) （60976036）
深圳市科技计划项目 （）
深圳市特种功能材料重点实验室开放基金(T201109,T201101)资助项目 （T201109,T201101）
