发光学报2012，Vol.33Issue(5)：492-498,7.DOI:10.3788/fgxb20123305.0492
压力及屏蔽对无限深量子阱中施主结合能的影响
Hydrostatic Pressure and Screening Influence on Binding Energies of Impurity in Quantum Wells with Infinite Barriers
摘要
Abstract
Under the effects of hydrostatic pressure and screening on the infinite GaAs/AlxGa1-xAs and GaN/AlxGa1-xN quantum wells, the binding energies of the impurity are calculated by the vari-ational method in the two systems. The impurity binding energies as functions of the well width and pressure are given. The result indicates that the binding energy increases with pressure, but decreases with well width. We also discussed the binding energies of impurity with and without the screening effects. It is found that the screening effect became stronger as pressure increases, and then decreases the binding energy of impurity significantly.关键词
量子阱/压力/屏蔽/结合能Key words
quantum well/ pressure/ screening/ binding energy分类
数理科学引用本文复制引用
刘贺,温淑敏,赵春旺,哈斯花..压力及屏蔽对无限深量子阱中施主结合能的影响[J].发光学报,2012,33(5):492-498,7.基金项目
国家自然科学基金(11062008) （11062008）
教育部新世纪优秀人才支持计划(NCET-10-D909) （NCET-10-D909）
内蒙古自治区自然科学基金(2010BS0102)资助项目 （2010BS0102）
