发光学报2012，Vol.33Issue(5)：509-513,5.DOI:10.3788/fgxb20123305.0509
多层AlGaAs的时间分辨归一化反射率及各向异性反射率谱在线监测及分析
In Situ Monitoring and Analysis of Normalized Reflectance and Reflectance Anisotropy of Multilayer AlGaAs Structure
摘要
Abstract
The growth rate and surface structure of AlGaAs sample were investigated by employing the optical in-situ monitoring technique. In situ monitoring of optical time resolved normalized reflectance (NR) and reflectance anisotropy (RA) in growth process of multilayer AlxGa1-xAs sample was carried out. Oscillation characteristics of NR curve was analyzed. Converged value of NR and RA curve changed monotonously with Al composition at the monitoring optical energy of 1.9 eV. The growth rate was gained from fitting the NR transient. And the deviation of calculated growth rate was lower than 0.02 nm/s compared to the SEM measurement results. From the analysis of time resolved RA curve, surface reconstruction caused by the growth temperature was observed during the epi-growth of GaAs layers.关键词
归-化反射率/各向异性反射率/在线监测技术/MOCVDKey words
normalized reflectance/ reflectance anisotropy spectroscopy/ in-situ monitoring/ MOCVD分类
信息技术与安全科学引用本文复制引用
张建伟,宁永强,张星,张建,徐华伟,张金龙,曾玉刚,王立军..多层AlGaAs的时间分辨归一化反射率及各向异性反射率谱在线监测及分析[J].发光学报,2012,33(5):509-513,5.基金项目
国家自然科学基金(60876036,10974012,11074247,60876036,61106047) （60876036,10974012,11074247,60876036,61106047）
国家自然科学基金重点(90923037)资助项目 （90923037）
