发光学报2012，Vol.33Issue(5)：519-524,6.DOI:10.3788/fgxb20123305.0519
AlN插入层对α-AlGaN的外延生长的影响
Effect of AlN Interlayer on α-plane AlGaN Grown by MOCVD
摘要
Abstract
The effect of AlN interlayer on strain states and its effect on optical properties of a-A1GaN epilayers grown by using metal organic chemical vapor deposition (MOCVD) method are investigated.The strain is characterized by the frequency shift based on Raman spectroscopy measurement.The results show that residual strain in a-AlGaN grown on the AlN interlayer is relaxed due to AlN interlayer act as a stable and compliant substrate induced weakening of mechanical strength.Accordingly,the near band edge emission (NBE) peak shows red shift in room temperature photoluminescence measurement.In addition,the introduction of AlN interlayer lead to the red shift of NBE photoluminescence peaks,which can be contribute to the strain determined by Raman spectra.关键词
α-AlGaN/AlN插入层/应力/拉曼光谱/光致发光Key words
α-plane AlGaN/ AlN interlayer/ strain/ Raman spectra/ PL分类
数理科学引用本文复制引用
贾辉,陈一仁,孙晓娟,黎大兵,宋航,蒋红,缪国庆,李志明..AlN插入层对α-AlGaN的外延生长的影响[J].发光学报,2012,33(5):519-524,6.基金项目
国家基础研究发展计划(2011CB301901) （2011CB301901）
国家自然科学基金(51072196,51072195,60976011)资助项目 （51072196,51072195,60976011）
