发光学报2012，Vol.33Issue(7)：780-784,5.DOI:10.3788/fgxb20123307.0780
退火温度对富硅氮化硅薄膜发光特性和结构的影响
Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride
摘要
Abstract
Silicon-rich silicon nitride film was deposited by plasma enhanced chemical vapor deposition (PECVD) on ( 100)-oriented monocrystalline silicon, according to silicon solar cell process. Photoluminescence ( PL) performance of the films at annealing temperatures in N2 ambient was studied, showing that temperatures had great effect on the characteristics. Excited by 325 run line, PL from defect-related states was only observed in the film and Si clusters has not been formed at annealing temperature 900 ℃. After annealed at different temperature, PL intensity decreased with increasing temperature. PL peak originated from defect energy Si dangling bond (K center). In this work, At 900 ℃ , disappearance of PL peak was attributed to increasing non-radiation recombination and silicon clusters has not been formed. Structure of silicon nitride has been measured by X-ray photo-electron spectroscopy (XPS) showing binding energy at 101. 8 eV and indicated that silicon phase has not been separated from silicon nitride. Infrared (FTIR) measurement provided a good confirm to PL analysis.关键词
氮化硅/PECVD/光致发光/硅悬挂键/硅纳米团簇Key words
silicon nitride/ PECVD/ photoluminescence/ silicon dangling bond/ silicon clusters分类
数理科学引用本文复制引用
谢正芳,单文光,吴小山,张凤鸣..退火温度对富硅氮化硅薄膜发光特性和结构的影响[J].发光学报,2012,33(7):780-784,5.基金项目
江苏科技厅工业支撑项目(BE2008125)资助 （BE2008125）
