发光学报2012，Vol.33Issue(7)：785-789,5.DOI:10.3788/fgxb20123307.0785
温度对p-InN薄膜光电导灵敏度的影响
Temperature-dependent Photoresponsivity Observed in Mg-doped p-InN Layers
摘要
Abstract
We reported the photoconductivity of Mg-doped p-InN layers, which were grown by molecular beam epitaxy (MBE). The surface of these samples was very flat which were observed by both reflection high energy electron diffraction (RHEED) and atomic force microscope (AFM). We studied the temperature-dependent photoconductivity of Mg-doped p-InN layers. We found out that the photosensitivity decreased with increasing temperature, which resulted from both the variation of photon-generated carrier concentration and the residual carrier concentration with increasing temperature.关键词
分子束外延/原位反射高能电子衍射/Mg掺杂p-InN/光电导灵敏度Key words
molecular beam epitaxy ( MBE)/ reflection high energy electron diffraction ( RHEED) / Mg doped p-InN/ photosensitivity分类
数理科学引用本文复制引用
冯丽..温度对p-InN薄膜光电导灵敏度的影响[J].发光学报,2012,33(7):785-789,5.
