红外技术2012，Vol.34Issue(5)：256-259,4.
本征和Al3+掺杂ZnO薄膜的特性研究
Properties of Intrinsic and Aluminum-doped ZnO Thin Films
摘要
Abstract
ZnO:Al thin films were prepared on the glass substrates by Sol-Gel method. The effects of Al3+ dopant concentration on the structural, optical and electrical properties of ZnO:Al films were studied by X-ray diffraction, AFM, UV-Vis absorption spectrum and Hall effect. The results indicated that the ZnO:Al thin films have a preferred c-axis (002) orientation perpendicular to the substrates, it seems that no effect on the crystal structure with adding various Al3+ dopant concentrations. The thin films still have the high visible transmittance. It was observed that 1.5 atm.% Al3+ dopant concentration of ZnO:AI film makes the film to achieve the minimum resistivity.关键词
ZnO∶Al薄膜/X射线衍射/紫外-可见光吸收光谱/霍尔效应Key words
ZnO:Al thin films, XRD, UV-Vis Absorption spectrum, electrical properties分类
信息技术与安全科学引用本文复制引用
宋立媛,唐利斌,姬荣斌,刘新近,陈雪梅,薛经纬,庄继胜,王茺,杨宇..本征和Al3+掺杂ZnO薄膜的特性研究[J].红外技术,2012,34(5):256-259,4.基金项目
本项目受国家自然科学基金(61106098)资助及兵器支撑项目资助. （61106098）
