激光技术2012，Vol.36Issue(4)：450-452,3.DOI:10.3969/j.issn.1001-3806.2012.04.005
电子束蒸发制备掺钕钇铝石榴石薄膜特性研究
Characteristics of Nd:Y3Al5O12 thin film prepared by electron beam evaporation deposition
摘要
Abstract
Si-based optoelectronic integration technology is one of the main study topics and development directions for the high-speed information. New Si-based luminescent materials were developed to break the limits of Nd: YAG solid laser material, which was confined by two main solid states: single crystal and transparent ceramics. Nd: YAG thin film was prepared on Si (100) substrates by electron beam evaporation deposition. The surface morphology, crystalline phase and optical properties of Nd:YAG thin film were characterized by X-ray diffraction, scanning electron microscopy and spectrophotometer. The crystallization of Nd:YAG thin film was improved after annealing at ll00'C for lh in the vacuum, photoluminescent spectra of Nd:YAG thin film were measured at room temperature, with 808nm radiation from a Ti: sapphire laser, and photoluminescent spectrum in the region of 1064nm peak was detected by a liquid nitrogen cooled InGaAs detector array. The results showed thai Nd: YAG crystalline thin film was grown on Si substrates for the first time by means of electron beam evaporation deposition and subsequent high temperature annealing process.关键词
薄膜/掺钕钇铝石榴石/电子束蒸发/光致发光Key words
thin films /Nd: YAG/electron beam evaporation/photoluminescence分类
数理科学引用本文复制引用
任豪,曾群,庞振华,周应恒,梁锡辉..电子束蒸发制备掺钕钇铝石榴石薄膜特性研究[J].激光技术,2012,36(4):450-452,3.基金项目
2009年广州市科学技术局应用基础研究计划资助项目(2009J1-C411) （2009J1-C411）
