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纤锌矿应变GaN柱形量子点中离子受主束缚激子的带间光跃迁

郑冬梅 王宗篪

量子电子学报2012,Vol.29Issue(4):385-391,7.
量子电子学报2012,Vol.29Issue(4):385-391,7.DOI:10.3969/j.issn.1007-5461.2012.04.001

纤锌矿应变GaN柱形量子点中离子受主束缚激子的带间光跃迁

Interband optical transitions due to ionized acceptor bound excitons in wurtzite GaN strained cylindrical quantum dot

郑冬梅 1王宗篪1

作者信息

  • 1. 三明学院物理与机电工程学院, 福建三明 365004
  • 折叠

摘要

Abstract

Considering the strong built-in electric field(BEF) in the wurtzite cylindrical GaN quantum dot(QD) with finite potential barriers, the interband optical transitions due to the exciton bound by an ion with charge -e (called ionized acceptor bound exciton (A-, X)) are investigated theoretically by means of the variational method. Numerical results show that the emission wavelengths sensitively depend on the QD size(L and R), the position of the ionized acceptor and Al composition x of the barrier material AlxGai-xN. The transition wavelength increases if the QD height, QD radius and Al composition x are increased. The emission wavelength firstly increases when the ionized accptor is moved from the left barrier of the QD to right along z-direction, and reaches its maximum when the acceptor is in the vicinity of the left interface of QD. Then the transition wavelength decreases if the acceptor is continuously moved toward right. The minimum value of the transition wavelength can be obtained when the acceptor is in the vicinity of the right interface of QD. The wavelength increases again if the acceptor is further moved to the right barrier of QD. The emission wavelength increases when the acceptor position po goes from the center of QD. Comparing with the free exciton state without the acceptor, the emission wavelength increases with introducing the ionized acceptor impurity into the left side of the QD center, and the emission wavelength reduces with introducing the ionized acceptor impurity into the right side of the QD center.

关键词

光电子学/柱形量子点/内建电场/离子受主束缚激子/发光波长

Key words

optoelectronics/ cylindrical quantum dot/ built-in electric field/ ionized acceptor bound exciton/ emission wavelength

分类

数理科学

引用本文复制引用

郑冬梅,王宗篪..纤锌矿应变GaN柱形量子点中离子受主束缚激子的带间光跃迁[J].量子电子学报,2012,29(4):385-391,7.

基金项目

福建省教育厅科技项目(JK2009038)、三明学院高等教育教学改革项目(ZL0703/JT) (JK2009038)

量子电子学报

OA北大核心CSCDCSTPCD

1007-5461

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